PART |
Description |
Maker |
SM15A |
Rat IgG2a Negative Control - Azide Free
|
List of Unclassifed Manufacturers ETC[ETC]
|
PAT0816 PAT1632-C-3DB-1 PAT1632-C-3DB-5 PAT1632-C- |
PAT series, RAT series, high-precision chip attenuators
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http:// List of Unclassifed Manufacturers ETC
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MK4096P-6 MK4096N-6 MK4096N-11 MK4096N-16 MK4096P- |
4096x1-bit dynamic RAM, 250ns acces time, 375ns cycle time, max. power 450mW. 4096x1-bit dynamic RAM, 350ns acces time, 500ns cycle time, max. power 320mW. 4096x1-bit dynamic RAM, 300ns acces time, 425ns cycle time, max. power 385mW.
|
Mostek
|
9-917541-2 |
Dynamic Series Connectors; DYNAMIC D-5200S H-HDR ASSY 4P ( AMP )
|
Tyco Electronics
|
1-1123624-5 |
Dynamic Series Connectors; DYNAMIC D-3200 HDR H 9P K-XXX ( AMP )
|
Tyco Electronics
|
HYB5116405BJ-50 HYB5116405BJ-60 HYB5117405BJ-70 HY |
4M x 4-Bit Dynamic RAM 2k & 4k Refresh 4M X 4 EDO DRAM, 70 ns, PDSO24 POWERLINE: RP12-S_DA - 2:1 Wide Input Voltage Range- 12 Watts Output Power- 1.6kVDC Isolation- Over Current Protection- Five-Sided Continuous Shield- Standard DIP24 and SMD-Pinning- Efficiency to 88% 4M x 4-Bit Dynamic RAM 2k & 4k Refresh
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SIEMENS A G SIEMENS AG http:// Siemens Semiconductor G...
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IRFR6215PBF IRFU6215PBF IRFR6215TR IRFR6215TRL IRF |
Advanced Process Technology HEXFET㈢ Power MOSFET HEXFET? Power MOSFET 13 A, 150 V, 0.295 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-252AA 175°C Operating Temperature
|
International Rectifier
|
IRFB4710PBF IRFS4710PBF IRFSL4710PBF IRFS4710TRR I |
High frequency DC-DC converters HEXFET㈢ Power MOSFET HEXFET? Power MOSFET 75 A, 100 V, 0.014 ohm, N-CHANNEL, Si, POWER, MOSFET
|
International Rectifier
|
IRFZ44NL IRFZ44NS IRFZ44NSTRR IRFZ44NLPBF IRFZ44NS |
55V Single N-Channel HEXFET Power MOSFET in a D2-Pak package 55V Single N-Channel HEXFET Power MOSFET in a TO-262 package HEXFET? Power MOSFET Power MOSFET(Vdss=55V, Rds(on)=0.0175ohm, Id=49A) (IRFZ44NL / IRFZ44NS) Power MOSFET TRANSISTOR | MOSFET | N-CHANNEL | 55V V(BR)DSS | 49A I(D) | TO-263AB 晶体管| MOSFET的| N沟道| 55V的五(巴西)直| 49A条(丁)|63AB
|
IRF[International Rectifier] International Rectifier, Corp.
|
Q67100-Q764 HYB514400BJ-70 HYB514400BJ-80 HYB51440 |
1M x 4-Bit Dynamic RAM Low Power 1M x 4-Bit Dynamic RAM
|
SIEMENS[Siemens Semiconductor Group]
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HY51VS18163HG HY51V18163HGT-6 HY51V18163HGJ HY51V1 |
Dynamic RAM organized 1,048,576 words x 16bit, 50ns, low power Dynamic RAM organized 1,048,576 words x 16bit, self refresh, 70ns, low power Dynamic RAM organized 1,048,576 words x 16bit, self refresh, 60ns, low power Dynamic RAM organized 1,048,576 words x 16bit, self refresh, 50ns, low power 1M x 16Bit EDO DRAM 100万16 EDO公司的DRAM 1M x 16Bit EDO DRAM 1M X 16 EDO DRAM, 50 ns, PDSO44 1M x 16Bit EDO DRAM 1M X 16 EDO DRAM, 60 ns, PDSO44 Dynamic RAM organized 1,048,576 words x 16bit, 60ns, low power Dynamic RAM organized 1,048,576 words x 16bit, 70ns, low power
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HYNIX[Hynix Semiconductor] Hynix Semiconductor, Inc.
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